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Homogeneous Si0.5Ge0.5 bulk crystal growth as substrates for strained Ge thin films by the traveling liquidus-zone method

✍ Scribed by Kyoichi Kinoshita; Osamu Nakatsuka; Shinichi Yoda; Shigeaki Zaima


Book ID
113937217
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
871 KB
Volume
520
Category
Article
ISSN
0040-6090

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