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Homoepitaxial{111}-oriented diamond pn junctions grown on B-doped Ib synthetic diamond

✍ Scribed by Tajani, A. ;Tavares, C. ;Wade, M. ;Baron, C. ;Gheeraert, E. ;Bustarret, E. ;Koizumi, S. ;Araujo, D.

Book ID: 105362780
Publisher: John Wiley and Sons
Year: 2004
Tongue: English
Weight: 220 KB
Volume: 201
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200405183

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## Abstract In the present study homoepitaxial diamond films have been grown by microwave plasma chemical vapour deposition (MWPCVD) on (001)‐oriented Ib HPHT substrates with off‐axis angles of up to 11°. Freestanding films of several hundred microns thickness were produced by removal of the Ib sub