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Homoepitaxial growth of high quality thick diamond film with microwave plasma CVD technique

✍ Scribed by Wang, Hong-Xing; Ishigaki, Noritaka; Ohkawa, Toshiki; Kokami, Shinichi; Inoue, Hideo; Terajima, Ryuuichi; Mutoh, Katsuhiko; Kotaki, Toshiro

Book ID: 120190254
Publisher: Cambridge University Press
Year: 2011
Weight: 200 KB
Volume: 1282
Category: Article
ISSN: 0272-9172
DOI: 10.1557/opl.2011.445

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## Abstract Diamond films were grown in an ASTeX MW PE CVD reactor. The effect of pre‐growth etching with a O~2~/H~2~ plasma and the influence of the methane concentration on growth on type Ib (100) HPHT synthetic diamonds were investigated. By controlling step flow growth we were able to prepare o