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Holographic optical elements (HOE) for semiconductor lasers

✍ Scribed by Hans Peter Herzig

Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
357 KB
Volume
58
Category
Article
ISSN
0030-4018

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## Abstract Device characteristics of GaN‐based semiconductor lasers have been analysed by numerical calculation. Anti‐guide‐like behaviour of the waveguide mode appears in InGaN laser structures where the cladding layers have insufficient thickness. Such phenomena are peculiar to laser structures