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Hole Transport in the Upper Hubbard Band in Cu-Doped Germanium under Uniaxial Pressure

โœ Scribed by W. Walukiewicz; O.D. Dubon; H.H. Silvestri; H.H. Silvestri; E.E. Haller; E.E. Haller


Book ID
101307719
Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
199 KB
Volume
210
Category
Article
ISSN
0370-1972

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By selective doping (Be) of the well and barrier regions of GaAs/Al 0.3 Ga 0.7 As structures we have realized the situation where the upper Hubbard band (A รพ centers) has been occupied by holes in the equilibrium. We studied the temperature behavior of the Hall effect, variable range hopping (VRH) c