Photoluminescence and transport in selec
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N.V. Agrinskaya; Yu.L. Ivanov; P.A. Petrov; V.M. Ustinov
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Article
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2003
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Elsevier Science
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English
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By selective doping (Be) of the well and barrier regions of GaAs/Al 0.3 Ga 0.7 As structures we have realized the situation where the upper Hubbard band (A รพ centers) has been occupied by holes in the equilibrium. We studied the temperature behavior of the Hall effect, variable range hopping (VRH) c