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Hole mobility enhancement in GaAs/p-Al0.3Ga0.7As QW-HEMT structures with (4 1 1)A super-flat interfaces grown by MBE

โœ Scribed by Satoshi Hiyamizu; Keisuke Shinohara; Kenji Kasahara; Yasuyuki Shimizu; Satoshi Shimomura; Richard A. Kiehl

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
138 KB
Volume
2
Category
Article
ISSN
1386-9477

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๐Ÿ“œ SIMILAR VOLUMES

Single-particle relaxation times in a ps
Single-particle relaxation times in a pseudomorphic In0.7Ga0.3 As/In0.52Al0.48As QW-HEMT structure with (4 1 1) A super-flat interfaces grown by MBE
โœ Takahiro Kitada; Toyohiro Aoki; Issei Watanabe; Kenji Kanzaki; Satoshi Shimomura ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 120 KB

Single-particle relaxation times in In0:7Ga0:3As=In 0:52 Al0:48As quantum well high electron mobility transistor (QW-HEMT) structures for two subbands (i = 0 and 1) are studied by fast Fourier transform analysis of Shubnikoov-de Haas (SdH) oscillations measured at 4 K in order to investigate remote

GaAs/AlAs super-flat interfaces in GaAs/
GaAs/AlAs super-flat interfaces in GaAs/AlAs and GaAs/(GaAs)2 (AlAs)2 quantum wells grown on (4 1 1)A GaAs substrates by MBE
โœ K Shinohara; Y Shimizu; S Shimomura; Y Okamoto; N Sano; S Hiyamizu ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 92 KB

E ectively atomically at GaAs=AlAs interfaces over a macroscopic area ("super-at interfaces") have been realized in GaAs=AlAs and GaAs=(GaAs)2 (AlAs)2 quantum wells (QWs) grown on (4 1 1)A GaAs substrates by molecular beam epitaxy (MBE). A single and very sharp photoluminescence (PL) peak was observ