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Hole injection into CdS from Cu2S

✍ Scribed by P.N. Keating


Publisher
Elsevier Science
Year
1963
Tongue
English
Weight
593 KB
Volume
24
Category
Article
ISSN
0022-3697

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Hole injection into CdS from Cu2S
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The release of atomic H during charge injection into SiO 2 layers thermally grown on silicon was monitored by measuring the H-induced decrease in the concentration of active boron acceptors at the Si surface. It is found that H is set free both upon trapping of holes in the oxide and upon their neut