## Abstract It has recently been reported that, after electrical conditioning, an ohmic hole contact is formed in poly(9,9‐dioctylfluorene) (PFO)‐based polymer light‐emitting diodes (PLED), despite the large hole‐injection barrier obtained with a poly(styrene sulfonic acid)‐doped poly(3,4‐ethylened
Hole-enhanced electron injection from ZnO in inverted polymer light-emitting diodes
✍ Scribed by Mingtao Lu; Paul de Bruyn; Herman T. Nicolai; Gert-Jan A.H. Wetzelaer; Paul W.M. Blom
- Book ID
- 116807453
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 479 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1566-1199
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📜 SIMILAR VOLUMES
An efficient electron injection/hole blocking layer, N-[3-(trimethoxysily)propyl]ethylenediamine that was grafted onto zinc oxide (ZnO/PEDA-TMS), was used in inverted polymer light-emitting diodes (PLEDs). PEDA-TMS induced a strong dipole directed towards ZnO, which was enhanced by vacuum energy lev
In the application of polymer light emitting diodes (PLEDs), to prevent etching of ITO by the acidic poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), the pHneutral PEDOT:PSS was introduced as the hole injection layer (HIL). For the double layer PEDOT:PSS HIL, the pH-neutral PEDO