Hole diffusion length and temperature dependence of photovoltages for n-Si electrodes modified with LB layers of ultrafine platinum particles

✍ Scribed by Jianguang Jia; Morio Fujitani; Shinji Yae; Yoshihiro Nakato

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 712 KB
• Volume: 42
• Category: Article
• ISSN: 0013-4686
• DOI: 10.1016/s0013-4686(96)00238-1

✦ Synopsis

A&&net-The mechanism of generation of high open-circuit photovoltages (Vows) of 0.62-0.63 V for n-Si (w 1 $2 cm) electrodes modified with colloidal Pt particles (4 nm in diameter) is investigated by measurements of minority-carrier (hole) diffusion length (Lp) and temperature dependence of VOC. Langmuir-Blodgett (LB) layers of colloidal Pt particles are used to control the Pt density on n-Si. The Lp value is determined to be 200 pm, irrespective of whether n-Si is modified with Pt or not. The temperature dependences of Vows at 203-298 K have been explained well by our previously proposed model. It is shown that heat treatments of the Pt-modified n-Si electrodes increase the area and the width of the direct Pt-Si contacts and thus decrease VW, but minority-carrier controlled (ideal) solar cells are obtained if the electrodes are prepared under appropriate conditions.