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Hole burning spectroscopy of InAs self-assembled quantum dots for memory application

✍ Scribed by Yoshihiro Sugiyama; Yoshiaki Nakata; Shunichi Muto; Yuji Awano; Naoki Yokoyama


Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
229 KB
Volume
7
Category
Article
ISSN
1386-9477

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We present selective photoluminescence and photoluminescence excitation spectroscopy on self-assembled quantum dots. These spectroscopic techniques reveal a large apparent 'Stokes' shift in In(Ga)As-Ga(Al)As self-assembled quantum dots. We demonstrate that the first two excited states observed in PL

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Spectral hole burning of InAs self-assembled quantum dots (QDs) buried in pn-junction was observed for the first time. At 5 K, a narrow hole with width of less than 1 nm was observed and the hole depth increased as electric field increased. The hole was observed up to 40 K. The spectral hole is cons