Non-quasi-static approach with surface-p
Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations
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T. Ezaki; D. Navarro; Y. Takeda; N. Sadachika; G. Suzuki; M. Miura-Mattausch; H.
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Article
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2008
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Elsevier Science
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English
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We develop a non-quasi-static MOSFET compact model suitable for simulating RF circuits operating under GHz frequency. The model takes into account the carrier dynamics by incorporating the time delay for the carriers to form a channel. Both the timedomain and frequency-domain expressions are success