✦ LIBER ✦
Highly strained In0.5Ga0.5P as wide-gap material on InP substrate for heterojunction field effect transistor application
✍ Scribed by F. Scheffer; A. Lindner; Q. Liu; C. Heedt; R. Reuter; W. Prost; H. Lakner; F.J. Tegude
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 581 KB
- Volume
- 145
- Category
- Article
- ISSN
- 0022-0248
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