Highly-sensitive InGaAs-2DEG Hall device made of pseudomorphic In0.52A10.48As/In0.8Ga0.2As heterostructure

✍ Scribed by Y. Sugiyama; Y. Takeuchi; M. Tacanot

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 480 KB
• Volume: 34
• Category: Article
• ISSN: 0924-4247
• DOI: 10.1016/0924-4247(92)80184-5