✦ LIBER ✦

Highly linear analog predistortion power amplifier with low memory effects at high drain bias voltage

✍ Scribed by Yong-Sub Lee; Mun-Woo Lee; Sang-Ho Kam; Yoon-Ha Jeong

Book ID: 102520293
Publisher: John Wiley and Sons
Year: 2010
Tongue: English
Weight: 486 KB
Volume: 52
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.24909

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

In this article, we propose a highly linear analog predistortion power amplifier (PA). To successfully use the analog predistorter, memory effects of the PA are significantly reduced using drain bias circuit with high drain bias voltage as well as widened λ/4 bias line and several decoupling capacitors. For a two‐tone signal and a two‐carrier wideband code division multiple access signal, the analog predistortion PA shows the significant IM3 cancellation and ACLR improvement by delivering low memory effects. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 295–299, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24909

📜 SIMILAR VOLUMES

Drain-voltage dependency of memory effec

Drain-voltage dependency of memory effects in W-CDMA base station digital predistortion linearizers with compound semiconductor power amplifiers

✍ Takeshi Takano; Yasuyuki Oishi; Toru Maniwa; Hiroyuki Hayashi; Toshihide Kikkawa 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 470 KB

With regard to wideband predistortion type power amplifiers, such as shared amplifiers used in W-CDMA base stations, the memory effects associated with RF power amplifiers degrade power efficiency. Aiming to solve this problem, we find that a high-voltage compound semiconductor device has sufficient