Highly doped InGaP/InGaAs/GaAs pseudomorphic HEMT's with 0.35 μm gates

✍ Scribed by Suehiro, H.; Miyata, T.; Kuroda, S.; Hara, N.; Takikawa, M.

• Book ID: 114535895
• Publisher: IEEE
• Year: 1994
• Tongue: English
• Weight: 540 KB
• Volume: 41
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.324582