𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devices

✍ Scribed by Samadhan B. Patil; Anand V. Vairagar; Alka A. Kumbhar; Laxmi K. Sahu; V. Ramgopal Rao; N. Venkatramani; R.O. Dusane; B. Schroeder


Book ID
108388604
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
345 KB
Volume
430
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.