✦ LIBER ✦
Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices
✍ Scribed by Govindarajan, S.; Boscke, T. S.; Sivasubramani, P.; Kirsch, P. D.; Lee, B. H.; Tseng, H.-H.; Jammy, R.; Schroder, U.; Ramanathan, S.; Gnade, B. E.
- Book ID
- 117990827
- Publisher
- American Institute of Physics
- Year
- 2007
- Tongue
- English
- Weight
- 433 KB
- Volume
- 91
- Category
- Article
- ISSN
- 0003-6951
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