✦ LIBER ✦
High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-${\rm SiN}_{x}$/RF-Sputtered-${\rm HfO}_{2}$
✍ Scribed by Choi, Woojin; Seok, Ogyun; Ryu, Hojin; Cha, Ho-Young; Seo, Kwang-Seok
- Book ID
- 125525810
- Publisher
- IEEE
- Year
- 2014
- Tongue
- English
- Weight
- 696 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0741-3106
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