High Tg Cyclic Olefin Copolymer Gate Dielectrics for N,N′-Ditridecyl Perylene Diimide Based Field-Effect Transistors: Improving Performance and Stability with Thermal Treatment
✍ Scribed by Jaeyoung Jang; Sooji Nam; Dae Sung Chung; Se Hyun Kim; Won Min Yun; Chan Eon Park
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 635 KB
- Volume
- 20
- Category
- Article
- ISSN
- 1616-301X
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✦ Synopsis
Abstract
A novel application of ethylene‐norbornene cyclic olefin copolymers (COC) as gate dielectric layers in organic field‐effect transistors (OFETs) that require thermal annealing as a strategy for improving the OFET performance and stability is reported. The thermally‐treated N,N′‐ditridecyl perylene diimide (PTCDI‐C13)‐based n‐type FETs using a COC/SiO~2~ gate dielectric show remarkably enhanced atmospheric performance and stability. The COC gate dielectric layer displays a hydrophobic surface (water contact angle = 95° ± 1°) and high thermal stability (glass transition temperature = 181 °C) without producing crosslinking. After thermal annealing, the crystallinity improves and the grain size of PTCDI‐C13 domains grown on the COC/SiO~2~ gate dielectric increases significantly. The resulting n‐type FETs exhibit high atmospheric field‐effect mobilities, up to 0.90 cm^2^ V^−1^ s^−1^ in the 20 V saturation regime and long‐term stability with respect to H~2~O/O~2~ degradation, hysteresis, or sweep‐stress over 110 days. By integrating the n‐type FETs with p‐type pentacene‐based FETs in a single device, high performance organic complementary inverters that exhibit high gain (exceeding 45 in ambient air) are realized.