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High-temperature operation up to 170/spl deg/C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy

✍ Scribed by Kageyama, T.; Miyamoto, T.; Makino, S.; Nishiyama, N.; Koyama, F.; Iga, K.


Book ID
119787648
Publisher
IEEE
Year
2000
Tongue
English
Weight
53 KB
Volume
12
Category
Article
ISSN
1041-1135

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