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High-temperature investigation of ZnS:Ga and CdSe:Ga

✍ Scribed by K. Lott; T. Nirk; O. Volobujeva; S. Shinkarenko; L. Türn; U. Kallavus; A. Grebennik; A. Vishnjakov


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
126 KB
Volume
376-377
Category
Article
ISSN
0921-4526

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✦ Synopsis


High-temperature electrical conductivity (HTEC) as a function of temperature T and metal component vapour pressure p Me has been studied in ZnS:Ga and CdSe:Ga single crystals. The dependence of the concentration of free carriers n, on p Me and T may be expressed as n$p a Me exp ðÀDE=kTÞ. The activation energies DE from HTEC isobars and slope a values from HTEC isotherms were determined. CdSe:Ga HTEC isotherm is independent of p Cd at temperatures lower than 850 1C. Ga acts in CdSe as a donor with electroneutrality condition (ENC) and Ga mass balance condition (MBC) approximation n ¼ ½Ga d

Cd % ½Ga total . ZnS:Ga isotherms characterize with a % 0:5 at temperatures higher than 1070 1C. ENC and Ga MBC approximation ½Ga d Zn ¼ ½ðGa Zn V Zn Þ = % 1=2½Ga total characterize Ga self-compensation in ZnS:Ga.


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