High-temperature investigation of ZnS:Ga and CdSe:Ga
✍ Scribed by K. Lott; T. Nirk; O. Volobujeva; S. Shinkarenko; L. Türn; U. Kallavus; A. Grebennik; A. Vishnjakov
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 126 KB
- Volume
- 376-377
- Category
- Article
- ISSN
- 0921-4526
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✦ Synopsis
High-temperature electrical conductivity (HTEC) as a function of temperature T and metal component vapour pressure p Me has been studied in ZnS:Ga and CdSe:Ga single crystals. The dependence of the concentration of free carriers n, on p Me and T may be expressed as n$p a Me exp ðÀDE=kTÞ. The activation energies DE from HTEC isobars and slope a values from HTEC isotherms were determined. CdSe:Ga HTEC isotherm is independent of p Cd at temperatures lower than 850 1C. Ga acts in CdSe as a donor with electroneutrality condition (ENC) and Ga mass balance condition (MBC) approximation n ¼ ½Ga d
Cd % ½Ga total . ZnS:Ga isotherms characterize with a % 0:5 at temperatures higher than 1070 1C. ENC and Ga MBC approximation ½Ga d Zn ¼ ½ðGa Zn V Zn Þ = % 1=2½Ga total characterize Ga self-compensation in ZnS:Ga.
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