High-Temperature Growth of Silica Sheathed Bi2S3 Semiconductor Nanowires

✍ Scribed by H.-X. Zhang; J.-P. Ge; Y.-D. Li

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 513 KB
• Volume: 11
• Category: Article
• ISSN: 0948-1907
• DOI: 10.1002/cvde.200406334

✦ Synopsis

Silica-sheathed Bi 2 S 3 nanowires (that prefer to grow along the c-axis) and monoliform nanowires, have been grown on Si(001) substrates using one-step atmospheric pressure CVD with BiCl 3 and sulfur precursors. The mechanisms concerning the stable chemical species (Bi 2 S 3 , silica) formed in the reaction atmosphere, the preferred growth direction (the c-axis) of the Bi 2 S 3 nanowires, and the formation of the silica sheaths are discussed using the thermodynamic data and the crystal structure of Bi 2 S 3 .