High-speed performance of 0.35 μm CMOS gates fabricated on low-dose SIMOX substrates with/without an N-well underneath the buried oxide layer

✍ Scribed by A. Yoshino; K. Kumagai; N. Hamatake; T. Tatsumi; H. Onishi; S. Kurosawa; K. Okumura

• Book ID: 126743085
• Publisher: IEEE
• Year: 1996
• Tongue: English
• Weight: 353 KB
• Volume: 17
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/55.485182