High-responsivity InGaAs/InP-based MSM p
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M. A. Matin; K. C. Song; B. J. Robinson; J. G. Simmons; D. A. Thompson
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Article
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1996
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John Wiley and Sons
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English
⚖ 558 KB
A high-responswity, low-capacitance and high-speed metal-semiconductor-metal photodetector (MSM-PD) with layer structure ln,,8sGao~ls P / InP / InGaAs / InP has been fabricated and characterized. For a 50 p m X 50 p m device with 2-pm finger width and 2-pm finger spacing we obtained a front illumina