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High-speed integrated circuits based on InP-MISFETs with plasma SiO2 gate insulator : K. P. Pande and D. Gutierrez. Solid St. Electron.28 (10), 1045 (1985)


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
132 KB
Volume
26
Category
Article
ISSN
0026-2714

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