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High-speed InP/lnGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers

✍ Scribed by M. T. Fresina; D. A. Ahmaki; S. Thomas; D. W. Barlage; C. A. Martino; M. Feng; G. E. Stillman


Book ID
112815091
Publisher
Springer US
Year
1996
Tongue
English
Weight
258 KB
Volume
25
Category
Article
ISSN
0361-5235

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