High-speed etching of amorphous silicon using pin-to-plate dielectric barrier discharge
✍ Scribed by Se-Jin Kyung; Jae-Beom Park; Yong-Hyuk Lee; June-Hee Lee; Geun-Young Yeom
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 426 KB
- Volume
- 202
- Category
- Article
- ISSN
- 0257-8972
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✦ Synopsis
Atmospheric pressure plasma was generated using a modified dielectric barrier discharge (pin-to-plate DBD) with the power electrode consisting of multi-pins instead of a conventional blank planar plate. The discharge and amorphous silicon (a:Si) etching characteristics of the pinto-plate DBD were compared with those of the conventional DBD at various N 2 /NF 3 mixtures. The pin-to-plate DBD showed higher power consumption and higher discharge current than the conventional DBD-type at a given voltage. Therefore, the pin-to-plate DBD appeared to be more efficient than the conventional DBD. In addition, the pin-to-plate DBD showed higher a:Si etch rates than the conventional DBD at various N 2 /NF 3 mixtures. With the pin-to-plate DBD, a maximum etch rate of a:Si of 72 nm/s were obtained with an electrode size of 170 mm × 100 mm, a gas mixture of 0.75% NF 3 in N2 and an AC voltage of 18 kV when the sample was stationary.