This authoritative account of electronic and optoelectronic devices operating at frequencies greater than 1 GHz covers the concepts and fundamental principles of operation, and, uniquely, their circuit applications too. Key features include: โข a comprehensive coverage of electron devices, such as M
High-Speed Electronics: Basic Physical Phenomena and Device Principles
โ Scribed by R. Castagnรฉ (auth.), Dr. Bengt Kรคllbรคck, Professor Dr. Heinz Beneking (eds.)
- Publisher
- Springer-Verlag Berlin Heidelberg
- Year
- 1986
- Tongue
- English
- Leaves
- 238
- Series
- Springer Series in Electronics and Photonics 22
- Edition
- 1
- Category
- Library
No coin nor oath required. For personal study only.
โฆ Synopsis
In the past, a number of Satellite Conferences have been held in conยญ nection with the International Conference on Physics of Semiconductors, covering selected fields of interest. In 1986, when the main conference was held in Stockholm, Sweden, new. phenomena had to be discussed: superยญ lattices, hot 'electron phenomena and new device structures for high-speed applications. The aim was to select topics which would be of interest to physicists as well as to electronics engineers. Therefore a Satellite Conยญ ference on H!gh-Speed Electronics, Basic Physical Phenomena and Device Principles, was arranged at Saltjobaden, a coastal resort near Stockholm. An organizing committee was established after the first suggestion made by Professor Grimmeiss from the University of Lund, Sweden, and some preliminary discussions on the Conference format. A Program Committee was established to be responsible for the further selection of the invited talks, the regular papers and poster presentation. The aim was to have a broad spectrum of contributions to attract physicists as well as deviceยญ oriented engineers and to stimulate discussions among the participants. These Proceedings contain all oral and poster presentations, with emยญ phasis on the invited talks, which give a competent overview of the field. The fast publication by Springer-Verlag has permitted the presentation of an up-to-date survey of the principles of high-speed electronics. Incorpoยญ ration in the Springer Series in Electronics and Photonics will enable the book to be distributed worldwide and to reach all interested scientists.
โฆ Table of Contents
Front Matter....Pages I-X
Front Matter....Pages 1-1
Modelling of High Electron Velocity Effects for Devices....Pages 2-10
Ballistic Transport and Electron Spectroscopy in Tunnelling Hot Electron Transfer Amplifiers (THETA)....Pages 11-18
Hot Electron Transistors....Pages 19-23
Tunneling Through IIIโV Low-Barrier Heterostructures....Pages 24-27
Velocity Overshoot and Suppression of Diffusivity and Microwave Noise in Short n + -n-n + Structures of GaAs....Pages 28-31
Mobility Overshoot of Hot Electrons....Pages 32-34
Monte-Carlo Simulation of the Effects Induced by Real-Space Transfer in a HEMT....Pages 35-39
Application of the Integral Boltzmann Equation to the Hot Electron Problem in an Inhomogeneous Submicron Structure....Pages 40-43
Three Picosecond Oscillations in Avalanche Electron-Hole Plasma Induced by Energy Relaxation Phenomena....Pages 44-47
Front Matter....Pages 49-49
Resonant Tunneling Transistors, Tunneling Superlattice Devices and New Quantum Well Avalanche Photodiodes....Pages 50-61
Novel Real-Space Transfer Devices....Pages 62-71
Transport Characteristics in Heterostructure Devices....Pages 72-78
Technical Issues of High-Speed Heterostructure Devices....Pages 79-87
Hot-Carrier-Excited Two-Dimensional Plasmon in Selectively Doped AlGaAs/GaAs Heterointerface Under High Electric Field Application....Pages 88-92
Optical High-Field-Transport Experiments in GaAs Quantum Wells....Pages 93-96
Optical Time-of-Flight Investigation in Ambipolar Carrier Transport in Specially Designed GaAs/GaAlAs Quantum Well Structures....Pages 97-100
An Ultra-Fast Optical Modulator: The Double-Well GaAs/GaAlAs Superlattice (DWSL)....Pages 101-103
High-Velocity Vertical Transport in Graded Gap GaAs/GaAlAs Superlattices....Pages 104-107
Modelling of Mobility Degradation in Submicron MOSFETs After Electrical Stressing....Pages 108-111
Negative Differential Mobility and Drift Velocity Overshoot in a Single Quantum Well of AlGaAs/GaAs/AlGaAs Heterostructure....Pages 112-115
Front Matter....Pages 49-49
Monte Carlo Study of Hot Electron Transport in GaAs-AlGaAs Quantum Wells....Pages 116-119
Front Matter....Pages 120-120
High-Speed Bulk Unipolar Structures in Silicon....Pages 121-122
Silicon Bulk Barrier Diodes Fabricated by LPVPE....Pages 123-126
Impact Ionization Breakdown of GaAs Current Limiters....Pages 127-131
The New High Speed Devices: The Barrier Transistor and the TEG-Base Transistor....Pages 132-135
Monte Carlo Investigation of the High Electron Mobility Transistor....Pages 136-139
Excess Gate Current Due to Hot Electrons in GaAs-Gate FETs....Pages 140-143
Potential Barriers in Doped GaAs by OM-VPE....Pages 144-147
Low Noise High Electron Mobility Transistors Grown By MOVPE....Pages 148-150
Emitter-Coupled Logic Ring Oscillators Implemented with GaAs/GaAlAs Single and Double Heterojunction Bipolar Transistors: A Comparison....Pages 151-155
Self-Aligned Technology Using Refractory Ohmic Contacts for GaAs/GaAlAs Heterojunction Bipolar Transistors....Pages 156-159
Novel Cryoelectronic Device Concept Based on Magnetically Controlled Current Flow in Bulk Semiconductors....Pages 160-163
InGaAlAs/InGaAs/InGaAlAs NnpnN Double Heterojunction Bipolar Transistors: Experimental Characteristics and Monte-Carlo Interpretation....Pages 164-167
Lattice-Strained Double Heterojunction InGaAs/GaAs Bipolar Transistors....Pages 168-171
Cryogenic GaAs Integrated Circuits Using a Lightly Doped GaAs FET Structure....Pages 172-176
GaAs-on-Insulator Structure Prepared by Heteroepitaxy of Fluorides and GaAs....Pages 177-181
Front Matter....Pages 183-183
Optoelectronic Generation of Very High Speed Electromagnetic Transients....Pages 184-190
Picosecond Electro-Optic Sampling....Pages 191-199
High-Speed Integrated Circuit Testing by Time-Resolved Photoemission....Pages 200-203
Overview of Optical Switching and Bistability....Pages 204-209
Front Matter....Pages 183-183
Monte Carlo Investigation of High-Speed GaAs Schottky Barrier Photodiode....Pages 210-213
A High-Speed Au/In 0.53 Ga 0.47 As/InP Schottky Barrier Photodiode for 1.3โ1.65 ยต m Photodetection....Pages 214-217
High Sensitivity Picosecond Optical Pulse Detection by Semiconductor Laser Amplifiers Via Cross-Correlation....Pages 218-222
GaAs Photoconductors to Characterize Picosecond Response in GaAs Integrated Devices and Circuits....Pages 223-225
Characterization of On-Chip Polycrystalline Silicon Photoconductors....Pages 226-229
Back Matter....Pages 231-232
โฆ Subjects
Optical and Electronic Materials;Electronics and Microelectronics, Instrumentation
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