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High-responsivity high-gain In0.53Ga0.47As-InP quantum-well infrared photodetectors grown using metal-organic vapor phase epitaxy

✍ Scribed by Majumdar, A.; Shah, A.; Gokhale, M.; Sen, S.; Ghosh, S.; Arora, B.M.; Tsui, D.

Book ID: 117882955
Publisher: IEEE
Year: 2005
Tongue: English
Weight: 610 KB
Volume: 41
Category: Article
ISSN: 0018-9197
DOI: 10.1109/jqe.2005.846698

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