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High responsivity 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors

✍ Scribed by WeiFeng Yang; Feng Zhang; ZhuGuang Liu; Ying Lü; ZhengYun Wu

Book ID
107360296
Publisher
Science in China Press (SCP)
Year
2008
Tongue
English
Weight
529 KB
Volume
51
Category
Article
ISSN
1672-1799

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Design, structure growth, fabrication, and characterization of high performance AlGaN-based metal-semiconductor-metal (MSM) photodetectors (PD) are reported. By incorporating AlN nucleation and buffer layers, the leakage current density of GaN MSM PD was reduced to 1.96 Â 10 À10 A/cm 2 at a 50 V bia