High-resolution X-ray photoelectron spectroscopy and characteristic electron-energy loss spectroscopy of the electronic structure of phosphorus-implanted silicon and quantum dots of silicon dioxide with silicon impurities

Sequential analysis of diamond nucleatio

Sequential analysis of diamond nucleation on silicon (001) with bias enhanced nucleation using X-ray photoelectron spectroscopy and reflection high energy electron diffraction investigations

✍ Sarrieu, C. ;Barth, N. ;Guise, A. ;Arnault, J. C. ;Saada, S. ;Barrat, S. ;Bauer- 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 449 KB

## Abstract Diamond synthesis by microwave plasma assisted chemical vapour deposition (MPCVD) with a bias enhanced nucleation (BEN) step constitutes the most efficient method to obtain heteroepitaxy and is also useful to reach high nucleation densities. In this study, sequential reflection high‐ene