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High Resolution Transmission Electron Microscope Analysis of CdSe/ZnSe Strained Layer Superlattices Grown on InP

✍ Scribed by Y. Nabetani; Y. Kobayashi; T. Kato; T. Matsumoto


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
99 KB
Volume
229
Category
Article
ISSN
0370-1972

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✦ Synopsis


The lattice structure of CdSe/ZnSe strained layer superlattices grown on InP is investigated by cross-sectional high resolution electron microscopy. The Cd composition is obtained by lattice image analysis. The Cd composition is modulated along the growth direction. A gradual change of Cd composition is shown at the CdSe/ZnSe interface. The strain energy calculation shows that the formation of a ZnCdSe layer at the interface almost relieves the strain. X-ray diffraction spectra are simulated using the obtained modulation profile of Cd composition. The simulated results well reproduce experimentally observed spectra.