High resolution study of the group V impurities absorption in silicon
β Scribed by B. Pajot; J. Kauppinen; R. Anttila
- Publisher
- Elsevier Science
- Year
- 1979
- Tongue
- English
- Weight
- 407 KB
- Volume
- 31
- Category
- Article
- ISSN
- 0038-1098
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π SIMILAR VOLUMES
The photoabsorption cross section of molecular N2 has been dctcrmincd in the range from JO-35 CV utilizing the continuum of synchrolron radiation from the DOKIS storage ring, a 3m norms1 incidence monochronwtor of0.05 X rc:soIution and photoeleclricill rccordu~g. New dctailcd tuatures arc obscrvcd w
cis-1-Chloro-2-fluoroethylene was synthesized, and the gas-phase infrared spectrum was investigated in the 4 band region between 1321-1350 cm Οͺ1 , at a resolution of about 0.002 cm Οͺ1 , employing a tunable diode-laser spectrometer. This vibration of symmetry species AΠ gives rise to an a/b-hybrid ba