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High-Resolution Electron Microscopy of the Silicon Carbide/Aluminum Carbide Interface

โœ Scribed by Toyohiko Yano; Satoshi Kato; Takayoshi Iseki


Book ID
110826036
Publisher
John Wiley and Sons
Year
1992
Tongue
English
Weight
769 KB
Volume
75
Category
Article
ISSN
0002-7820

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๐Ÿ“œ SIMILAR VOLUMES


High-resolution transmission electron mi
โœ Mohamed Benaissa; Jacques Werckmann; Gabrielle Ehret; Jean Guille; Eric Peschier ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Springer ๐ŸŒ English โš– 687 KB

SiC whiskers were grown from the reaction of silicon monoxide (SiO) with activated carbon containing iron impurities. Growth proceeds through a VLS growth mechanism with SiO and CO as reacting gases. HRTEM combined with EDS shows that the SiC whisker is topped by a Fe3Si catalyst droplet. The SiC wh