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High resolution diffraction and DLTS investigation results of the epitaxial Ga 1 − x AlxAsGaAs layers produced with the MOCVD method

✍ Scribed by Z Czekała-Mukalled; S Kuźmiński; E Płaczek-Popko; J Szatkowski; J Kozlowski; L Jȩdral


Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
251 KB
Volume
48
Category
Article
ISSN
0042-207X

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