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High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 μm

✍ Scribed by Thijs, P.J.A.; van Dongen, T.


Book ID
120175324
Publisher
The Institution of Electrical Engineers
Year
1989
Tongue
English
Weight
292 KB
Volume
25
Category
Article
ISSN
0013-5194

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