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High quality SiO2 gate insulator suitable for poly-Si TFTs on plastic substrates employing inductively coupled plasma-chemical vapor deposition with N2O plasma treatment and excimer laser annealing

✍ Scribed by Sang-Myeon Han; Moon-Young Shin; Joong-Hyun Park; Min-Koo Han


Book ID
116669025
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
331 KB
Volume
352
Category
Article
ISSN
0022-3093

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