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High quality ion implanted boron emitters in an interdigitated back contact solar cell with 20% efficiency

✍ Scribed by Nicholas Bateman; Paul Sullivan; Christian Reichel; Jan Benick; Martin Hermle


Book ID
116425652
Publisher
Elsevier
Year
2011
Weight
495 KB
Volume
8
Category
Article
ISSN
1876-6102

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Improved diffusion profiles in back-cont
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## Abstract The performance of __n__‐type back‐contacted back‐junction silicon solar cells where the boron‐doped emitter diffusion on the rear side is locally overcompensated by a phosphorus‐doped base‐type back surface field (BSF) diffusion has been analysed theoretically and experimentally. By ov