High-quality GaN epilayer grown by newly designed horizontal counter-flow MOCVD reactor

✍ Scribed by Cheul-Ro Lee; Sung-Jin Son; In-Hwan Lee; Jae-Young Leem; Sam Kyu Noh

• Book ID: 108342552
• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 648 KB
• Volume: 182
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/s0022-0248(97)00316-3