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High purity GaAs and AlGaAs grown using tertiarybutylarsine, trimethylaluminum, and trimethylgallium

✍ Scribed by R.M. Biefeld; H.C. Chui; B.E. Hammons; W.G. Breiland; T.M. Brennan; E.D. Jones; M.H. Kim; P. Grodzinski; K.H. Chang; H.C. Lee

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

GaAs growth using tertiarybutylarsine an

✍ C.A. Larsen; N.I. Buchan; S.H. Li; G.B. Stringfellow 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 437 KB

Mechanisms of GaAs growth using tertiary

✍ C.A. Larsen; S.H. Li; N.I. Buchan; G.B. Stringfellow 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 757 KB

High mobility InAs grown on GaAs substra

✍ Watkins, S. P.; Tran, C. A.; Ares, R.; Soerensen, G. 📂 Article 📅 1995 🏛 American Institute of Physics 🌐 English ⚖ 341 KB

Transport Investigations on High Purity

✍ G. Steude; D.M. Hofmann; B.K. Meyer; H. Hartdegen; M. Hollfelder 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 194 KB

Surface morphology of GaAs grown by gas-

✍ Hideaki Ishikawa; Kazuhiro Kondo; Shigehiko Sasa; Hitoshi Tanaka; Satoshi Hiyami 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 289 KB

Si-doping in GaAs grown by metalorganic

✍ T. Tanabe; H. Matsubara; A. Saegusa; H. Kimura; S. Takaguchi; T. Shirakawa; K. T 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 507 KB