High purity alpha silicon nitride nanowires - synthesis and dielectric properties

✍ Scribed by Xie, T. ;Wu, Y. C. ;Cai, W. P. ;Zhang, L. D.

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 205 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200520044

✦ Synopsis

Abstract

High purity single crystal alpha silicon nitride (α‐Si~3~N~4~) nanowires were obtained in high yield via a simple vapor phase reaction approach without the presence of catalyst. The produced α‐Si~3~N~4~ nanowires have diameters mostly ranging from 30 to 100 nm and lengths of several hundred micrometers. The nanowires were grown via vapor–solid (VS) mechanism. The room‐temperature dielectric properties show that the effective dielectric constants of α‐Si~3~N~4~ nanowires is higher than that of the α‐Si~3~N~4~ micropowders, especially at low frequencies. Analysis of the dielectric properties indicates that the small size effect of nanowires has great influence on the dielectric behavior of the samples. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)