High-pressure synthesis of MgB2 with addition of Ti
β Scribed by T.A. Prikhna; W. Gawalek; Ya.M. Savchuk; V.E. Moshchil; N.V. Sergienko; T. Habisreuther; M. Wendt; R. Hergt; Ch. Schmidt; J. Dellith; V.S. Melnikov; A. Assmann; D. Litzkendorf; P.A. Nagorny
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 1007 KB
- Volume
- 402
- Category
- Article
- ISSN
- 0921-4534
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract The high pressure phase of title is prepared by heating the ambientβpressure form of MgB~2~C~2~ at 9 GPa and 1300 Β°C for 24 h.
New compounds LaMS 3 with NH 4 CdCl 3 -type crystal structure could be prepared by high-pressure synthesis where M β«Ψβ¬ Ti, V, Cr. The high-pressure compounds were obtained above 2.5 GPa at 1375 K for M β«Ψβ¬Cr, above 3.5 GPa at 1375 K for M β«Ψβ¬ Ti, and above 5 GPa at 1475 K for M β«Ψβ¬ V, respectively.
## Abstract A series of HgOβdoped MgB~2~ samples have been prepared under high pressure. Even 27 and 43βwt% impurities have been observed in the Mg~1.05β__x__~(HgO)~__x__~B~2~ samples with __x__β=β0.05 and 0.075, the critical current density, __J__~c~, have been significantly improved under both lo