High-pressure Raman scattering in InGaN heteroepitaxial layers: Effect of the substrate on the phonon pressure coefficients

✍ Scribed by Oliva, R.; Ibáñez, J.; Cuscó, R.; Dadgar, A.; Krost, A.; Gandhi, J.; Bensaoula, A.; Artús, L.

• Book ID: 121822007
• Publisher: American Institute of Physics
• Year: 2014
• Tongue: English
• Weight: 617 KB
• Volume: 104
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.4870529