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High-pressure induced phase formation in the CuGaS 2 -CuGaO 2 chalcopyrite-delafossite system

✍ Scribed by Salak, Andrei N.; Zhaludkevich, Aleksandr L.; Ignatenko, Oleg V.; Lisenkov, Aleksey D.; Yaremchenko, Aleksey A.; Zheludkevich, Mikhail L.; Ferreira, Mário G. S.

Book ID
121816962
Publisher
John Wiley and Sons
Year
2014
Tongue
English
Weight
500 KB
Volume
251
Category
Article
ISSN
0370-1972

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The High Pressure Phase in the Chalcopyr
The High Pressure Phase in the Chalcopyrite AgGaTe2
✍ Y. Mori; S.-I. Iwamoto; K.-I. Takarabe; S. Minomura; A. L. Ruoff 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 168 KB 👁 2 views

High pressure X-ray diffraction measurements were performed on AgGaTe 2 chalcopyrite semiconductor up to 30 GPa; the space group and atomic positions under high pressure were refined by the Rietveld method. The first phase transition occurred at 3.1 GPa from the chalcopyrite phase to the coexisting