High-photosensitivity a-SiGe: H films prepared by RF glow discharge plasma CVD method

✍ Scribed by Fangqing Zhang; Zhizhong Song; Yongping Guo; Guanghua Chen

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 247 KB
• Volume: 29
• Category: Article
• ISSN: 0927-0248
• DOI: 10.1016/0927-0248(93)90034-z

✦ Synopsis

Highly photosensitive and narrow band gap a-SiGe:H films have been prepared by the RF glow discharge plasma CVD method. The photosensitivity was 2.01 × 10 s for the film with an optical band gap of Eg = 1.47 eV. H 2 dilution and a relatively high RF power are attributed to the improving of the optoelectrical properties. Thermally induced changes of the a-SiGe : H films have been also investigated.