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High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5 -

✍ Scribed by Lambert, B; Corre, A Le; Drouot, V; L'Haridon, H; Loualiche, S

Book ID
125467785
Publisher
Institute of Physics
Year
1998
Tongue
English
Weight
81 KB
Volume
13
Category
Article
ISSN
0268-1242

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The e ects of desorption and di usion of indium adatoms on the photoluminescence (PL) from InAs self-assembled quantum dots (QDs) are investigated by introducing growth interruptions after QD formation. Large, low-density and small, high-density QDs were grown by molecular beam epitaxy using low (0: