Modified Oligothiophenes with High Photo
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G. Barbarella; L. Favaretto; G. Sotgiu; M. Zambianchi; V. Fattori; M. Cocchi; F.
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Article
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1999
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John Wiley and Sons
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English
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vices the required Q S to obtain a specific m is slightly lower than in SiO 2 -and BZT-based devices assuming that there is a reduced concentration of traps in the pentacene channel of solution-processed BST-based TFTs relative to ones comprising BZT or SiO 2 gate insulators. The use of solution-pr