High Performance Silicon Imaging. Fundamentals and Applications of CMOS and CCD Sensors
โ Scribed by Daniel Durini
- Publisher
- Elsevier Ltd, Woodhead Publishing
- Year
- 2014
- Tongue
- English
- Leaves
- 466
- Series
- Woodhead Publishing Series in Electronic and Optical Materials
- Edition
- 1
- Category
- Library
No coin nor oath required. For personal study only.
โฆ Synopsis
High Performance Silicon Imaging covers the fundamentals of silicon image sensors, with a focus on existing performance issues and potential solutions. The book considers several applications for the technology as well. Silicon imaging is a fast growing area of the semiconductor industry. Its use in cell phone cameras is already well established, and emerging applications include web, security, automotive, and digital cinema cameras.
Part one begins with a review of the fundamental principles of photosensing and the operational principles of silicon image sensors. It then focuses in on charged coupled device (CCD) image sensors and complementary metal oxide semiconductor (CMOS) image sensors. The performance issues considered include image quality, sensitivity, data transfer rate, system level integration, rate of power consumption, and the potential for 3D imaging. Part two then discusses how CMOS technology can be used in a range of areas, including in mobile devices, image sensors for automotive applications, sensors for several forms of scientific imaging, and sensors for medical applications.
High Performance Silicon Imaging is an excellent resource for both academics and engineers working in the optics, photonics, semiconductor, and electronics industries.
- Covers the fundamentals of silicon-based image sensors and technical advances, focusing on performance issues
- Looks at image sensors in applications such as mobile phones, scientific imaging, TV broadcasting, automotive, and biomedical applications
โฆ Table of Contents
Content:
Front matter, Pages i-iii
Copyright, Page iv
Contributor contact details, Pages xi-xiv, D. Durini, D. Durini, D. Arutinov, M. Lesser, A. Lahav, A. Fenigstein, A. Strum, B. Choubey, W. Mughal, L. Gouveia, D. Ginhac, R.J. Gove, C. De Locht, H. Van den Broeck, J. Bogaerts, R. Turchetta, R.K. Henderson, B.R. Rae, D.-U. Li, A. Strum, A. Fenigstein, et al.
Woodhead Publishing Series in Electronic and Optical Materials, Pages xv-xx
1 - Fundamental principles of photosensing, Pages 3-24, D. Durini, D. Arutinov
2 - Operational principles of silicon image sensors, Pages 25-77, D. Durini, D. Arutinov
3 - Charge coupled device (CCD) image sensors, Pages 78-97, M. Lesser
4 - Backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) image sensors, Pages 98-123, A. Lahav, A. Fenigstein, A. Strum
5 - Circuits for high performance complementary metal-oxide-semiconductor (CMOS) image sensors, Pages 124-164, B. Choubey, W. Mughal, L. Gouveia
6 - Smart cameras on a chip: using complementary metal-oxide-semiconductor (CMOS) image sensors to create smart vision chips, Pages 165-188, D. Ginhac
7 - Complementary metal-oxide-semiconductor (CMOS) image sensors for mobile devices, Pages 191-234, R.J. Gove
8 - Complementary metal-oxide-semiconductor (CMOS) image sensors for automotive applications, Pages 235-249, C. De Locht, H. Van Den Broeck
9 - Complementary metal-oxide-semiconductor (CMOS) image sensors for use in space, Pages 250-280, J. Bogaerts
10 - Complementary metal-oxide-semiconductor (CMOS) sensors for high-performance scientific imaging, Pages 281-311, R. Turchetta
11 - Complementary metal-oxide-semiconductor (CMOS) sensors for fluorescence lifetime imaging (FLIM), Pages 312-347, R.K. Henderson, B.R. Rae, D.-U. Li
12 - Complementary metal-oxide-semiconductor (CMOS) X-ray sensors, Pages 348-372, A. Strum, A. Fenigstein
13 - Complementary metal-oxide-semiconductor (CMOS) and charge coupled device (CCD) image sensors in high-definition TV imaging, Pages 373-410, P. Centen
14 - High-performance silicon imagers and their applications in astrophysics, medicine and other fields, Pages 411-438, S. Nikzad
Index, Pages 439-456
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