High-performance n-type organic field-effect transistors fabricated by ink-jet printing using a C60 derivative

✍ Scribed by Eun Young Park; Jin Sun Park; Tae-Dong Kim; Kwang-Sup Lee; Hyun Seok Lim; Jong Sun Lim; Changjin Lee

• Book ID: 104076021
• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 263 KB
• Volume: 10
• Category: Article
• ISSN: 1566-1199
• DOI: 10.1016/j.orgel.2009.05.006

✦ Synopsis

We report on the performance of ink-jet-printed n-type organic thin-film transistors (OTFTs) based on a C 60 derivative, namely, C 60 -fused N-methyl-2-(3-hexylthiophen-2yl)pyrrolidine (C 60 TH-Hx). The new devices exhibit excellent n-channel performance, with a highest mobility of 2.8 Â 10 À2 cm 2 V À1 s À1 , an I On /I Off ratio of about 1 Â 10 6 , and a threshold voltage of 7 V. The C 60 TH-Hx films show large crystalline domains that result from the influence of an evaporation-induced flow, thus leading to high electron mobility in the inkjet-printed devices.