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High-performance integrated passive technology by advanced SI-GaAs-based fabrication for RF and microwave applications

✍ Scribed by Cong Wang; Ji-Hoon Lee; Nam-Young Kim


Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
387 KB
Volume
52
Category
Article
ISSN
0895-2477

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✦ Synopsis


Abstract

In this letter, an advanced SI‐GaAs‐based manufacturing process is presented for creating high quality, cost effective, and compact size integrated passive devices. Through this advanced process, accurate thin film resistors, high Q spiral inductors, and high yield/breakdown voltage metal‐insulator‐metal capacitors can be successfully realized. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 618–623, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25018